p age:p 4 - p 1 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. fe a tures the AO3401 uses advanced trench technology to provide excellent rds(on), low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. parameter symbol maximum unit drain - source voltage v ds - 30 v gate - source voltage v gs 12 v continuous dr ain current a t a =25c i - 4.2 a t =70c - 3.5 pulsed drain current b i dm - 30 power dissipation a t a =25c p d 1.4 w t a =70c 1 junction and storage temperature range t j , t stg - 55 to 150 c thermal characteristics parameter symbol typ max u nit maximum junction - to - ambient a t 10s r ja 65 90 c/w maximum junction - to - ambient a steady - state 85 125 c/w maximum junction - to - lead c steady - state r jl 43 60 c/w AO3401 p - channel mosfet sot - 23 1.gate 2.source 3.drain g d s absolute maximum ratings (ta=25 o c, unless otherwise noted)
p age:p 4 - p 2 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. electrical characteristics (ta=25c, unless otherwise noted) symbol parameter conditions min typ max unit static parameters b v dss drain - source breakdown voltage i d = - 25 0 a, v gs =0v - 30 v i dss zero gate voltage drain current v d s = - 24v, v gs =0v - 1 a t j =55c - 5 i gss gate - body leakage current v d s =0v, v gs =12v 100 na v gs(th) gate threshold voltage v d s =v gs i d = - 25 0 a - 0.7 - 1 - 1.3 v i d ( on) on state drain current v gs = - 4.5v, v d s = - 5v - 25 a r ds(on) static drain - source on - resistance v gs = - 10v, i d = - 4.2a 42 50 m ? t j =125c 75 v gs = - 4.5v, i d = - 4a 53 65 m ? v gs = - 2.5v, i d = - 1a 80 120 m ? g fs forward transconductance v d s = - 5v, i d = - 5a 7 11 s v sd diode forward voltage i s = - 1a, v gs =0v - 0.75 - 1 v i s maximum body - diode continuous current - 2.2 a i sm pulsed body - diode current b - 30 a dynamic parameters c iss input capacitance v gs =0v, v d s = - 15v, f=1mhz 954 pf c oss output capacitance 115 pf c rss reverse transfer capacitance 77 pf r g gate resistance v gs =0v, v d s =0v, f=1mhz 6 ? switching parameters q g total gate charge v gs = - 4.5v, v d s = - 15v, i d = - 4a 9.4 nc q gs gate source charge 2 nc q gd gate drain charge 3 nc t d ( on ) turn - on delaytime v gs = - 10v, v d s = - 15v, r l =3. 6 ? , r ge n = 6 ? 6.3 ns t r turn - on rise time 3.2 ns t d ( off ) turn - off delaytime 38.2 ns t f turn - off fall time 12 ns t rr body diode reverse recovery time i f = - 4a, di/dt=100a / s 20.2 ns q rr body diode reverse recovery charge i f = - 4a, di/dt=100a / s 11.2 nc a: the value of r ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environme nt with t a =25c. the value in any a given application depends on the user's specific board design. the curr ent rating is based on the t 10s thermal resistance rating b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 ,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device m ounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with t a=25c. the soa curve provides a single pulse rating AO3401
p age:p 4 - p 3 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. a o3401 typical characteristics 0.00 5.00 10.00 15.00 20.00 25.00 0.00 1.00 2.00 3.00 4.00 5.00 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2v -2.5v -3v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 40 60 80 100 120 0.00 2.00 4.00 6.00 8.00 10.00 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-2.5v i d =-3.5a, v gs =-10v i d =-3.5a, v gs =-4.5v 10 30 50 70 90 110 130 150 170 190 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-2.5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-1a
p age:p 4 - p 4 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. 0 1 2 3 4 5 024681012 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-4a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s AO3401 typical characteristics
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